The researchers investigated Titanium Oxide (TiO2) to create an electron-selective contact structure that doesn’t require a high-temperature process. Titanium metal was deposited using a thermal evaporator, and an additional oxidation process was conducted to form titanium oxide. The chemical compositions and phases of the titanium dioxide layers were analyzed by X-ray diffraction. The passivation effects of each titanium oxide layer were measured using the quasi-steady-state photoconductance.
The study analyzed the layer properties when TiO2 had a passivation effect on the silicon surface. The charge and interface defect densities of the layer were analyzed through CV measurements, and the passivation characteristics according to the TiO2 phase change were investigated.
As a result, by applying optimized TiO2 layer thickness and annealing temperature conditions through the experiment for passivation to the cell-like structure, which is the structure before metal and electrode formation, an implied open-circuit voltage (iVoc) of 630 mV and an emitter saturation current density (J0) value of 60.4 fA/cm2 were confirmed.